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| DATA SHEET SILICON TRANSISTOR ARRAY PA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The PA1437 is PNP silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES 10 MIN. 1.4 0.6 0.1 2.54 1.4 0.5 0.1 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. * Easy mount by 0.1 inch of terminal interval. * High hFE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 10 2.5 PA1437H CONNECTION DIAGRAM 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT1** PT2*** Tj -100 -100 -7 m3 m6 V V V A/unit A/unit A/unit W W C R1 R2 (E) (B) (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 . R1 = 8.3 k . . R2 = 600 . -0.3 3.5 28 150 Tstg -55 to +150 C * PW 300 s, Duty Cycle 10 % ** 4 Circuits, Ta = 25 C *** 4 Circuits, Tc = 25 C The information in this document is subject to change without notice. Document No. IC-3516 Date Published September 1994 P Printed in Japan (c) 1994 PA1437 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC Collector to Emitter Sustaining Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL VCEO(SUS) MIN. -100 TYP. MAX. UNIT V TEST CONDITIONS IC = -1.5 A, IB = -1.5 mA, L = 1 mH VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.5 A IC = -1.5 A, IB = -1.5 mA IC = -1.5 A, IB = -1.5 mA IC = -1.5 IB1 = -IB2 . VCC = 50 . See test A = -1.5 mA . V, RL = 33 . circuit ICBO IEBO hFE1 hFE2 -10 -1 A mA -- * * 1000 2000 -0.9 -1.5 1 3 1 20000 -1.2 -2 -- V V VCE(sat) * VBE(sat) * ton tstg tf s s s * PW 350 s, Duty Cycle 2 % / pulsed SWITCHING TIME TEST CIRCUIT . RL = 33 . VIN IB1 IB2 PW . PW = 50 s . Duty Cycle 2 % . VBB = 5 V . IC T.U.T. Base Current Wave Form . VCC = -50 V . Collector Current Wave Form ton 10 % IC 90 % tstg tf IB2 IB1 2 PA1437 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING CURVE OF SAFE OPERATING AREA -10 dT - Percentage of Rated Current - % -5 100 IC - Collector Current - A 80 60 40 20 -0.01 0 50 100 150 TC - Case Temperature - C TC = 25 C Single Pulse -1 -5 -10 -50 VCE - Collector to Emitter Voltage - V -1 -0.5 SAFE OPERATING AREA IC(pulse) MAX. IC(DC) MAX. Di Lim ssip ite atio n d S/ bL im ite d = 30 10 0s 30 0s 1 ms s 5 S/ 0 m bs Li m ite d PW -0.05 -100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC PA1437 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 20 1 Circuit Operation 4 3 2 1 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 10 0 25 50 75 100 125 Ta - Ambient Temperature - C 150 0 25 50 75 100 125 TC - Case Temperature - C 150 DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Saturation Voltage - V VCE = -2.0 V Pulsed -100 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 1000*IB Pulsed hFE - DC Current Gain 10000 125 C 75 C 25 C Ta = -25 C -10 VBE (sat) -1.0 VCE (sat) 1000 100 -0.01 -0.1 -1.0 IC - Collector Current - A -10 -0.1 -0.01 -0.1 -1.0 IC - Collector Current - A -10 3 VCEO MAX. ss Di ip at io -0.1 n Li m i te d PA1437 TRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - C/W 100 VCE 10 V -5.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -500 -450 -400 10 IC - Collector Current - A -4.0 -350 -300 -250 -3.0 -200 -150 -100 -2.0 1 -1.0 IB = -50 A 0.1 0.1 1 10 PW - Pulse Width - ms 100 0 -1.0 -2.0 -3.0 -4.0 VCE - Collector to Emitter Voltage - V -5.0 4 PA1437 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 PA1437 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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